High aspect ratio all diamond tips formed by focused ion beam for conducting atomic force microscopy

被引：46

作者：

Olbrich, A ^{[1
]}

Ebersberger, B

Boit, C

Niedermann, P

Hänni, W

Vancea, J

Hoffmann, H

机构：

[1] Siemens Semicond Div HL FA, D-81730 Munich, Germany

[2] Swiss Ctr Elect & Microtechnol Inc, CH-2007 Neuchatel, Switzerland

[3] Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 04期

关键词：

D O I：

10.1116/1.590842

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conductive (boron doped) all diamond tips are best suited for use as electrical probes for scanning probe experiments due to their hardness, chemical inertness, and resistivity against wear. In order to overcome the problems of image distortion induced by the tip shape the aspect ratio of the diamond tips was increased to about 7:1 by focused ion beam milling, maintaining a tip radius of typically 30 nm at the apex. The application of these sharpened tips to conducting atomic force microscopy for local electrical characterization of thin metal-oxide-semiconductor dielectrics is demonstrated. Excess current flow was detected at the transition region between the gate oxide and the bordering field oxide due to oxide thinning introduced by the local oxidation of silicon process. (C) 1999 American Vacuum Society. [S0734-211X(99)06504-X].

引用

页码：1570 / 1574

页数：5

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