Density of states and σ-π mixing in hydrogenated amorphous carbon films

被引:5
作者
Fanchini, G
Paret, V
Tagliaferro, A
Thèye, ML
机构
[1] Politecn Torino, Dipartimento Fis, I-10129 Turin, Italy
[2] Politecn Torino, Unita INFM, I-10129 Turin, Italy
[3] Univ Paris 06, CNRS, UMR 7601, Lab Opt Solides, F-75252 Paris 05, France
关键词
D O I
10.1016/S0022-3093(01)01105-X
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work we analyse the real and imaginary parts of the complex dielectric functions of two a-C:H samples, which are available over a wide energy range (2-25 eV). Values of the Sp(3)/sp(2) ratios matching those determined by XANES can be obtained by an optical analysis of these data. provided that an asymmetric Gaussian density of states model (for pi-like states) and suitable matrix element values (for sigma-like states) are used. These results also suggest that bonding and anti-bonding states sitting similar to2 eV above and below Fermi level are not pure pi-states, but that some pi-sigma mixing is occurring. The origin and the effects of such a mixing are discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:858 / 863
页数:6
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