Electroluminescence from forward-biased Er-doped GaP p-n junctions at room temperature

被引：7

作者：

Ford, GM ^{[1
]}

Wessels, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,CTR MAT RES,EVANSTON,IL 60208

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 08期

关键词：

D O I：

10.1063/1.115734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electroluminescent properties of Er-doped GaP light emitting diodes are reported. Diodes were prepared by metalorganic vapor phase epitaxy and zinc diffusion. Strong characteristic Er3+ emission at 0.80 eV (1.54 mu m) under forward bias is detected at room temperature. Minimal thermal quenching of the electroluminescence was observed. The luminescence intensity depended linearly on current density for low applied current densities, and saturated at a current density of 17 A/cm(2) (C) 1996 American Institute of Physics.

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页码：1126 / 1128

页数：3

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