High charge density and mobility in poly(3-hexylthiophene) using a polarizable gate dielectric

被引:79
作者
Naber, R. C. G.
Mulder, M.
de Boer, B.
Blom, P. W. M.
de Leeuw, D. M.
机构
[1] Univ Groningen, Mat Sci Ctr Plus, NL-9747 AG Groningen, Netherlands
[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
关键词
poly(3-hexylthiophene); ferroelectric polymer; field-effect transistor;
D O I
10.1016/j.orgel.2005.11.007
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Organic field-effect transistors (OFETs) typically exhibit either a high charge transport mobility or a high charge density. Here we demonstrate an OFET in which both the mobility and the charge density have high values of 0.1 cm(2)/V s and 28 mC/m(2), respectively. The high charge density is induced by the ferroelectric polarization of the gate dielectric poly(vinylidene fluoride/trifluoroethylene). The high mobility is achieved in a regioregular poly(3-hexylthiophene) semiconductor using a transistor with a top-gate layout that inherently exhibits a smooth semiconductor-dielectric interface. The combination of high mobility and charge density yields a record conductance value for polymer-based FETs of 0.3 mu S. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:132 / 136
页数:5
相关论文
共 17 条
[11]   Influence of the dielectric roughness on the performance of pentacene transistors [J].
Steudel, S ;
De Vusser, S ;
De Jonge, S ;
Janssen, D ;
Verlaak, S ;
Genoe, J ;
Heremans, P .
APPLIED PHYSICS LETTERS, 2004, 85 (19) :4400-4402
[12]  
Sze S.M., 2013, SEMICONDUCTOR DEVICE
[13]   Unification of the hole transport in polymeric field-effect transistors and light-emitting diodes [J].
Tanase, C ;
Meijer, EJ ;
Blom, PWM ;
de Leeuw, DM .
PHYSICAL REVIEW LETTERS, 2003, 91 (21)
[14]   A nonvolatile memory element based on an organic field-effect transistor [J].
Unni, KNN ;
de Bettignies, R ;
Dabos-Seignon, S ;
Nunzi, JM .
APPLIED PHYSICS LETTERS, 2004, 85 (10) :1823-1825
[15]   Gate insulators in organic field-effect transistors [J].
Veres, J ;
Ogier, S ;
Lloyd, G ;
de Leeuw, D .
CHEMISTRY OF MATERIALS, 2004, 16 (23) :4543-4555
[16]   Low-k insulators as the choice of dielectrics in organic field-effect transistors [J].
Veres, J ;
Ogier, SD ;
Leeming, SW ;
Cupertino, DC ;
Khaffaf, SM .
ADVANCED FUNCTIONAL MATERIALS, 2003, 13 (03) :199-204
[17]   Pentacene TFT driven AM OLED displays [J].
Zhou, LS ;
Park, SN ;
Bai, B ;
Sun, J ;
Wu, SC ;
Jackson, TN ;
Nelson, S ;
Freeman, D ;
Hong, Y .
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (09) :640-642