Enhanced hole injection in organic electroluminescent device with an additional oxygen-rich indium-tin-oxide sublayer

被引：4

作者：

Choi, MW ^{[1
]}

Cho, K ^{[1
]}

Sung, C ^{[1
]}

Yang, J ^{[1
]}

Noh, YYM ^{[1
]}

Choi, JC ^{[1
]}

Jeong, K ^{[1
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 02期

关键词：

D O I：

10.1116/1.1688352

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To reduce the hole-injection barrier, an additional indium-tin-oxide (ITO) sublayer with high oxygen concentration is introduced between the ITO anode layer and hole-transporting layer. A thin ITO layer with a high oxygen concentration is prepared by increasing oxygen partial pressure during deposition of the last few tens A of ITO layer via rf magnetron sputtering. The workfunction and chemical composition of the resulting film are determined by using ultraviolet photoemission spectroscopy (UPS) and x-ray photoemission spectroscopy. UPS results indicate the increment of the workfunction by 0.19 eV. The measured luminescence-voltage and current-voltage characteristics of the final organic electroluminescent devices with an oxygen-rich ITO sublayer demonstrate enhanced characteristics. Our result suggests that the film resistivity, as well as the workfunction of the ITO layer, should be optimized for the best device performance. (C) 2004 American Vacuum Society.

引用

页码：758 / 761

页数：4

共 12 条

[1] STRUCTURE AND INITIAL OXIDATION OF LAB6 (001) SURFACE [J].

AONO, M ;

TANAKA, T ;

BANNAI, E ;

KAWAI, S .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :323-325

[2] Efficient CsF/Yb/Ag cathodes for organic light-emitting devices [J].

Chan, MY ;

Lai, SL ;

Fung, MK ;

Tong, SW ;

Lee, CS ;

Lee, ST .

APPLIED PHYSICS LETTERS, 2003, 82 (11) :1784-1786

[3] Triplet exciton confinement in phosphorescent polymer light-emitting diodes [J].

Chen, FC ;

He, GF ;

Yang, Y .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1006-1008

[4] Combined photoemission/in vacuo transport study of the indium tin oxide/copper phthalocyanine/N,N′-diphenyl-N,N′-bis(l-naphthyl)-1,1′biphenyl-4,4"diamine molecular organic semiconductor system [J].

Hill, IG ;

Kahn, A .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (04) :2116-2122

[5] Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode [J].

Hung, LS ;

Tang, CW ;

Mason, MG .

APPLIED PHYSICS LETTERS, 1997, 70 (02) :152-154

[6] Effects of excess oxygen introduced during sputter deposition on carrier mobility in as-deposited and postannealed indium-tin-oxide films [J].

Kikuchi, N ;

Kusano, E ;

Kishio, E ;

Kinbara, A ;

Nanto, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (04) :1636-1641

[7] Indium tin oxide thin films for organic light-emitting devices [J].

Kim, H ;

Piqué, A ;

Horwitz, JS ;

Mattoussi, H ;

Murata, H ;

Kafafi, ZH ;

Chrisey, DB .

APPLIED PHYSICS LETTERS, 1999, 74 (23) :3444-3446

[8] Surface oxidation activates indium tin oxide for hole injection [J].

Milliron, DJ ;

Hill, IG ;

Shen, C ;

Kahn, A ;

Schwartz, J .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :572-576

[9] Reduced operating voltage of organic electroluminescent devices by plasma treatment of the indium tin oxide anode [J].

Steuber, F ;

Staudigel, J ;

Stössel, M ;

Simmerer, J ;

Winnacker, A .

APPLIED PHYSICS LETTERS, 1999, 74 (23) :3558-3560

[10] Dependence of indium-tin-oxide work function on surface cleaning method as studied by ultraviolet and x-ray photoemission spectroscopies [J].

Sugiyama, K ;

Ishii, H ;

Ouchi, Y ;

Seki, K .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :295-298

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