Local-density approximation study of semiconductor metal adsorption characteristics:: Ge/Ag(100)

被引：10

作者：

Sawaya, S ^{[1
]}

Goniakowski, J ^{[1
]}

Tréglia, G ^{[1
]}

机构：

[1] CNRS, Ctr Rech Mecanismes Croissance Cristalline, F-13288 Marseille 9, France

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.59.15337

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using the ab initio full-potential linear muffin-tin orbital approach, we have studied the characteristics of Ge adsorption on the Ag(100) surface. We have determined the preferential adsorption site and analyzed the adsorption-induced modifications of electronic structure of both the substrate and the adsorbate. By considering three model epitaxial deposits 1.0, 0.50, and 0.25 Ge ML we have accessed the characteristics of the evolution of the adatom-surface bonding as a function of the amount of deposited germanium. We report a very clear site and coverage dependence of the measurable physical parameters, which can be directly used for analysis of experimental data. [S0163-1829(99)05623-4].

引用

页码：15337 / 15345

页数：9

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