MOVPE of GaN using a specially designed two-flow horizontal reactor

被引:19
作者
Nishida, K
Haneda, S
Hara, K
Munekata, H
Kikimoto, H
机构
[1] Toppan Printing Co., Ltd., Tokyo, 110, 5-1, 1-chome Taito, Taito-ku
[2] Imaging Sci. and Eng. Laboratory, Tokyo Institute of Technology, Yokohama 226, 4259 Nagatsuda, Midori-ku
关键词
D O I
10.1016/S0022-0248(96)00598-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
GaN epilayers have been grown on (0001) sapphire substrates with a specially designed two-flow horizontal metalorganic vapor phase epitaxy (MOVPE) reactor. Epilayers with flat and smooth surfaces were obtained at the growth temperature of 950 degrees C with relatively low source supply rates, This indicates a relatively high growth efficiency of the reactor, Characterization by photoluminescence, X-ray diffraction and Hall measurements reveal that the epilayers are of reasonably high quality.
引用
收藏
页码:312 / 315
页数:4
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