MOVPE of GaN using a specially designed two-flow horizontal reactor

被引：19

作者：

Nishida, K

Haneda, S

Hara, K

Munekata, H

Kikimoto, H

机构：

[1] Toppan Printing Co., Ltd., Tokyo, 110, 5-1, 1-chome Taito, Taito-ku

[2] Imaging Sci. and Eng. Laboratory, Tokyo Institute of Technology, Yokohama 226, 4259 Nagatsuda, Midori-ku

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(96)00598-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN epilayers have been grown on (0001) sapphire substrates with a specially designed two-flow horizontal metalorganic vapor phase epitaxy (MOVPE) reactor. Epilayers with flat and smooth surfaces were obtained at the growth temperature of 950 degrees C with relatively low source supply rates, This indicates a relatively high growth efficiency of the reactor, Characterization by photoluminescence, X-ray diffraction and Hall measurements reveal that the epilayers are of reasonably high quality.

引用

页码：312 / 315

页数：4