Localization of Na impurities at the buried CdS/Cu(In, Ga)Se2 heterojunction

被引:31
作者
Heske, C [2 ]
Eich, D
Fink, R
Umbach, E
Kakar, S
van Buuren, T
Bostedt, C
Terminello, LJ
Grush, MM
Callcott, TA
Himpsel, FJ
Ederer, DL
Perera, RCC
Riedl, W
Karg, F
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Sight Source, Berkeley, CA 94720 USA
[2] Univ Wurzburg, D-97074 Wurzburg, Germany
[3] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94551 USA
[4] Univ Tennessee, Knoxville, TN 37996 USA
[5] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA
[6] Tulane Univ, New Orleans, LA 70118 USA
[7] Siemens AG, Corp Res & Dev, D-80807 Munich, Germany
[8] Siemens Solar GmbH, D-80807 Munich, Germany
关键词
D O I
10.1063/1.124923
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate a general approach to identify and locate minority species at buried interfaces which are of fundamental interest in many fields of solid state research. The approach combines soft x-ray emission for bulk and photoelectron spectroscopy for surface sensitivity. In the present study, the interface between a thin CdS layer and a Cu(In, Ga)Se-2 thin film solar cell absorber has been investigated, showing that Na impurities are localized at the buried CdS/Cu(In, Ga)Se-2 heterojunction. (C) 1999 American Institute of Physics. [S0003-6951(99)02740-0].
引用
收藏
页码:2082 / 2084
页数:3
相关论文
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