Determination of the valence band offset and minority carrier lifetime in Ge-rich layers on relaxed-SiGe

被引：7

作者：

Chakraborty, S ^{[1
]}

Bera, MK

Bhattacharya, S

Bose, PK

Maiti, CK

机构：

[1] Indian Inst Technol, Dept Elect & ECE, Kharagpur 721302, W Bengal, India

[2] Queens Univ Belfast, Sch Elect & Elect Engn, Belfast BT7 1NN, Antrim, North Ireland

[3] Jadavpur Univ, Dept Mech Engn, Kolkata 700032, W Bengal, India

来源：

THIN SOLID FILMS | 2006年 / 504卷 / 1-2期

关键词：

valence band offset; minority carrier lifetime; Ge-rich SiGe;

D O I：

10.1016/j.tsf.2005.09.044

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Capacitance-voltage (C-V) technique is used to investigate the electronic properties of Si0.3Ge0.7 hetero layers deposited on fully relaxed Si0.3Ge0.6. This is a fast and nondestructive method to determine important electronic properties, such as, apparent doping concentration, SiGe layer thicknesses, and threshold voltage and valence band offset in a heterostructure. Capacitance transient (C-t) method has been used to determine minority carrier lifetime front the slope of the Zerbst plot and is found to be 23.9 mu s. Interface properties of high-k gate dielectric (ZrO2) deposited on SiGe has also been studied prior to transient capacitance measurements. Average midgap value of interface state density (D-it) extracted from high-frequency C-V measurement is found to be 1.1 x 10(12) cm(-2) eV(-1). (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：73 / 76

页数：4

共 15 条

[1] Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient [J].

Bera, LK ;

Mathew, S ;

Balasubramanian, N ;

Braithwaite, G ;

Currie, MT ;

Singaporewala, F ;

Yap, J ;

Hammond, R ;

Lochtefeld, A ;

Bulsara, MT ;

Fitzgerald, EA .

APPLIED SURFACE SCIENCE, 2004, 224 (1-4) :278-282

[2] Deposition of high-k ZrO2 films on strained SiGe layers using microwave plasma [J].

Chatterjee, S ;

Samanta, SK ;

Banerjee, HD ;

Maiti, CK .

ELECTRONICS LETTERS, 2001, 37 (06) :390-392

[3] Band offset predictions for strained group IV alloys:: Si1-x-yGexCy on Si(001) and Si1-xGex on Si1-zGez(001) [J].

Galdin, S ;

Dollfus, P ;

Aubry-Fortuna, V ;

Hesto, P ;

Osten, HJ .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (06) :565-572

[4] Measurement of the generation lifetime in SiGe epitaxial layers using a modified Zerbst technique [J].

Hall, S ;

Goh, IS ;

Wu, ZY .

JOURNAL OF CRYSTAL GROWTH, 1995, 157 (1-4) :90-95

[5] Noncontact minority carrier lifetime measurement of Si and SiGe epilayers prepared by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition [J].

Hwang, SH ;

Eo, YP ;

Seo, JH ;

Whang, KW ;

Yoon, E ;

Tae, HS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03) :1033-1036

[6] EFFECT OF DISLOCATIONS ON THE MINORITY CARRIER LIFETIME IN SEMICONDUCTORS [J].

KURTZ, AD ;

KULIN, SA ;

AVERBACH, BL .

PHYSICAL REVIEW, 1956, 101 (04) :1285-1291

[7] HIGH-MOBILITY P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON STRAINED SI [J].

NAYAK, DK ;

WOO, JCS ;

PARK, JS ;

WANG, KL ;

MACWILLIAMS, KP .

APPLIED PHYSICS LETTERS, 1993, 62 (22) :2853-2855

[8] The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si:Si0.9Ge0.1:Si substrates [J].

Riley, LS ;

Hall, S ;

Bonar, JM .

SOLID-STATE ELECTRONICS, 1999, 43 (12) :2247-2250

[9] High-mobility Si and Ge structures [J].

Schaffler, F .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (12) :1515-1549

[10] MICROSECOND CARRIER LIFETIMES IN STRAINED SILICON-GERMANIUM ALLOYS GROWN BY RAPID THERMAL CHEMICAL VAPOR-DEPOSITION [J].

SCHWARTZ, PV ;

STURM, JC .

APPLIED PHYSICS LETTERS, 1990, 57 (19) :2004-2006

← 1 2 →