Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient

被引：16

作者：

Bera, LK

Mathew, S

Balasubramanian, N

Braithwaite, G

Currie, MT

Singaporewala, F

Yap, J

Hammond, R

Lochtefeld, A

Bulsara, MT

Fitzgerald, EA

机构：

[1] Inst Microelect, Singapore 117685, Singapore

[2] AmberWave Syst Corp, Salem, NH 03079 USA

来源：

APPLIED SURFACE SCIENCE | 2004年 / 224卷 / 1-4期

关键词：

SiGe; heterostructure; strained-Si; generation lifetime; band offset;

D O I：

10.1016/j.apsusc.2003.08.054

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Carrier generation lifetime (tau(g)) in strained-Si/SiGe has been investigated using capacitance transient method in MOS structure. Interface properties of thermally grown gate oxide on strained-Si/SiGe has been studied prior to transient capacitance measurements. Average midgap value of interface state density (D-it) extracted from quasi-static CV measurement is around 2 x 10(10) to 5 x 10(10) cm(-2) eV(-1) for both strained-Si and bulk-Si samples. The observed non-linear behavior of capacitance transient characteristics for strained-Si/SiGe heterostructure are due to the carrier confinement in the potential wells caused by virtue of the valence band and conduction band discontinuities. Generation lifetime in strained-Si and SiGe buffer layer estimated from the segments of Zerbst plot having different slopes. The value of generation lifetime in strained-Si, SiGe buffer and co-processed bulk-Si is ranges from 120 to 170 mus, 20 to 90 mus and 177 mus, respectively. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：278 / 282

页数：5

共 18 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].