Stimulated emission in blue-emitting Si+-implanted SiO2 films?

被引:58
作者
Luterová, K
Pelant, I
Mikulskas, I
Tomasiunas, R
Muller, D
Grob, JJ
Rehspringer, JL
Hönerlage, B
机构
[1] Acad Sci Czech Republ, Inst Phys, Prague 16253 6, Czech Republic
[2] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania
[3] Lab PHASE, CNRS, UPR 292, F-67037 Strasbourg, France
[4] ULP, Inst Phys & Chim Mat Strasbourg, CNRS, UMR 7504, F-67037 Strasbourg, France
关键词
D O I
10.1063/1.1447308
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the blue photoluminescence of Si+-implanted SiO2 films under picosecond UV excitation. The emission intensity exhibits a nonlinear increase with increasing excitation intensities, accompanied by pulse shortening. The photoluminescence decays nonmonoexponentially in time. However, the nonlinearities are not associated with significant spectral narrowing. To explain the results, we propose and numerically investigate a kinetic model based on competition between radiative (both spontaneous and stimulated) and nonradiative recombination in isolated luminescence centers in the SiO2 matrix. Good agreement between theoretical and experimental data seems to confirm the existence of stimulated emission in the films, however, under extremely high excitation densities only (approximately 100 MW/cm(2)). (C) 2002 American Institute of Physics.
引用
收藏
页码:2896 / 2900
页数:5
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