Highly nonlinear photoluminescence threshold in porous silicon

被引：60

作者：

Nayfeh, M ^{[1
]}

Akcakir, O

Therrien, J

Yamani, Z

Barry, N

Yu, W

Gratton, E

机构：

[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[2] KFUPM, Dhahran, Saudi Arabia

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 26期

关键词：

D O I：

10.1063/1.125553

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Porous silicon is excited using near-infrared femtosecond pulsed and continuous wave radiation at an average intensity of similar to 10(6) W/cm(2) (8 x 10(10) W/cm(2) peak intensity in pulsed mode). Our results demonstrate the presence of micron-size regions for which the intensity of the photoluminescence has a highly nonlinear threshold, rising by several orders of magnitude near this incident intensity for both the pulsed and continuous wave cases. These results are discussed in terms of stimulated emission from quantum confinement engineered intrinsic Si-Si radiative traps in ultrasmall nanocrystallites, populated following two-photon absorption. (C) 1999 American Institute of Physics. [S0003-6951(99)04852-4].

引用

页码：4112 / 4114

页数：3

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