QUENCHING OF POROUS SILICON PHOTOLUMINESCENCE BY DEPOSITION OF METAL ADSORBATES

被引：113

作者：

ANDSAGER, D

HILLIARD, J

HETRICK, JM

ABUHASSAN, LH

PLISCH, M

NAYFEH, MH

机构：

[1] Department of Physics, University of Illinois at Urbana-Champaign, Urbana, IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 07期

关键词：

D O I：

10.1063/1.354350

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Various metals were deposited on luminescent porous silicon (PS) by immersion in metal ion solutions and by evaporation. The photoluminescence (PL) was quenched upon immersion in ionic solutions of Cu, Ag, and Au but not noticeably quenched in other ionic solutions. Evaporation of 100 angstrom of Cu or 110 angstrom of Au was not observed to quench PL. Auger electron spectroscopy performed on samples quenched and then immediately removed from solution showed a metallic concentration in the PS layer of order 10 at.%, but persisting to a depth of order 3000 angstrom.

引用

页码：4783 / 4785

页数：3

共 17 条

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