Time-resolved reflectivity characterization of polycrystalline low-temperature-grown GaAs

被引：23

作者：

Roux, JF ^{[1
]}

Coutaz, JL

Krotkus, A

机构：

[1] Univ Savoie, Lab Hyperfrequences & Caracterisat, F-73376 Le Bourget Du Lac, France

[2] Inst Semicond Phys, LT-2600 Vilnius, Lithuania

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 17期

关键词：

D O I：

10.1063/1.123881

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using femtosecond time resolved reflectivity, we have characterized the dynamics of photoinduced generated carriers in a polycrystalline low-temperature-grown GaAs sample. Our measurements are fitted with an analytical expression reliable for low pump power experiments. The sample, which presents no As precipitates, shows an ultrafast subpicosecond response together with a longer picosecond tail that we attribute to the midgap defect states. Moreover, we have observed the influence of surface roughness on the differential reflected signal. (C) 1999 American Institute of Physics. [S0003-6951(99)04817-2].

引用

页码：2462 / 2464

页数：3

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