High-carrier-density electron dynamics in low-temperature-grown GaAs

被引：70

作者：

Sosnowski, TS

Norris, TB

Wang, HH

Grenier, P

Whitaker, JF

Sung, CY

机构：

[1] Center for Ultrafast Optical Science, University of Michigan, Ann Arbor

[2] Dept. of Electrical Engineering, UCLA, Los Angeles

[3] Applied Materials, Santa Clara

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 24期

关键词：

D O I：

10.1063/1.119138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pump-probe differential transmission measurements examine high-carrier-density phenomena in as-grown and annealed GaAs samples grown at temperatures from 210 to 270 degrees C. We observe trap saturation and Auger recombination, and accurately model the measurements on annealed samples with a simple two level rate equation, allowing us to extract the trapped-electron lifetimes. (C) 1997 American Institute of Physics.

引用

页码：3245 / 3247

页数：3

共 9 条

[1]

Benjamin SD, 1996, APPL PHYS LETT, V68, P2544, DOI 10.1063/1.116178

[2] SUBPICOSECOND CARRIER LIFETIME IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES [J].