Resonance ultrasonic vibration diagnostics of elastic stress in full-size silicon wafers

被引：34

作者：

Belyaev, A

Polupan, O

Ostapenko, S

Hess, D

Kalejs, JP

机构：

[1] Univ S Florida, Tampa, FL 33620 USA

[2] RWE Schott Solar Inc, Billerica, MA 01821 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 03期

关键词：

D O I：

10.1088/0268-1242/21/3/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A resonance vibration approach is developed to measure residual stress non-destructively in full-size multi crystalline silicon wafers used in solar cell manufacturing. This method is based on excitation of longitudinal resonance ultrasonic vibrations in the material using an external piezoelectric transducer combined with high-sensitive ultrasonic probe and data acquisition of the frequency response to make the method suitable for in-line diagnostics during wafer and cell manufacturing. Theoretical and experimental analysis of the vibration mode in single-crystal and multicrystalline silicon wafers is used to provide a benchmark reference analysis and validation of the approach.

引用

页码：254 / 260

页数：7

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