Stress diagnostics in multicrystalline silicon wafers using an acoustic technique

被引：2

作者：

Belyaev, A ^{[1
]}

Lulu, S ^{[1
]}

Tarasov, I ^{[1
]}

Ostapenko, S ^{[1
]}

Kalejs, JP ^{[1
]}

机构：

[1] Univ S Florida, Microelect Res Ctr, Tampa, FL 33620 USA

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190526

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Residual stress is generated in silicon crystals during growth of material for use as substrates for solar cells. This stress affects yield in processing the wafers into cells and modules. We report here on the application of a resonance acoustic method, used previously to measure stress in. CZ silicon wafers, to characterize multicrystalline EFG silicon ribbon wafers.

引用

页码：332 / 335

页数：4

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