Multicrystalline silicon thin films:: Laser crystallization conditions and properties

被引：7

作者：

Andrä, G

Bergmann, J

Falk, F

Ose, E

Sinh, ND

机构：

[1] Inst Phys Hochtechnol, DE-07743 Jena, Germany

[2] Hahn Meitner Inst Berlin GmbH, DE-12489 Berlin, Germany

来源：

SOLID STATE PHENOMENA | 1999年 / 67-8卷

关键词：

laser crystallization; glass substrate; thin film transistors; solar cells;

D O I：

10.4028/www.scientific.net/SSP.67-68.187

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Conditions for crystallizing a-Si:H films on glass substrates by laser methods are discussed. Special emphasis is given to crystallization procedures for thin film solar cells and for TFT's using Ar(+) or Cu vapor lasers. The properties of the resulting films such as grain structure, electrical properties, and impurity concentration is discussed.

引用

页码：187 / 191

页数：5

共 11 条

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