The Pospieszalski noise model and the imaginary part of the optimum noise source impedance of extrinsic or packaged FET's

被引:2
作者
Boglione, L
Pollard, RD
Postoyalko, V
机构
[1] Sch. of Electron. and Elec. Eng., Inst. of Microwaves and Photonics, University of Leeds
来源
IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1997年 / 7卷 / 09期
关键词
amplifier noise; circuit modeling; feedback circuits; microwave FET amplifiers; semiconductor device noise;
D O I
10.1109/75.622535
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The imaginary part X-Sopt of the optimum noise impedance for extrinsic or packaged devices is investigated, The analysis modifies the well-known Pospieszalski noise model by applying a series feedback to the source port, A simple expression for X-Sopt is developed and is verified for extrinsic and packaged devices with a decreasing level of accuracy, The results give further insights into the way the parasitic inductors L-g and L-s affect the noise performance of the transistor and can help to design low-noise amplifier with simultaneous signal and noise power match at the input port.
引用
收藏
页码:270 / 272
页数:3
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