Structure and transport properties of isomer-separated C82 -: art. no. 165412

被引：17

作者：

Kubozono, Y ^{[1
]}

Rikiishi, Y

Shibata, K

Hosokawa, T

Fujiki, S

Kitagawa, H

机构：

[1] Okayama Univ, Dept Chem, Okayama 7008530, Japan

[2] Japan Sci & Technol Corp, CREST, Kawaguchi 3220012, Japan

[3] Univ Tsukuba, TARA Ctr, Tsukuba, Ibaraki 3058577, Japan

[4] Inst Mol Sci, Okazaki, Aichi 4448585, Japan

[5] Kyushu Univ, Dept Chem, Fukuoka 8128581, Japan

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.69.165412

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Structure of isomer-separated crystalline C-82 has been studied by powder x-ray diffraction with synchrotron radiation. The Rietveld refinement was achieved by assuming a simple cubic lattice (space group Pa (3) over bar). The C-2(a) symmetry for the C-82 molecule was supported in this analysis. Transport properties of thin film of C-82 have been studied by resistivity measurement. The thin film showed a narrow-gap semiconductorlike behavior with gap energy of 0.43 eV. The field effect transistor (FET) of a C-82 thin film showed an n-channel normally-on depletion-type behavior, and the mobility was 1.9x10(-3) cm(2) V-1 s(-1) whose value was one of the largest mu among normally-on FETs with fullerenes. A hopping transport was found as channel conduction for the C-82 FET above 150 K.

引用

页码：165412 / 1

页数：7

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