Catalytic Growth of Graphene: Toward Large-Area Single-Crystalline Graphene

被引：130

作者：

Ago, Hiroki ^{[1
,2
]}

Ogawa, Yui ^{[2
]}

Tsuji, Masaharu ^{[1
,2
]}

Mizuno, Seigi ^{[2
]}

Hibino, Hiroki ^{[3
]}

机构：

[1] Kyushu Univ, Inst Mat Chem & Engn, Fukuoka 8168580, Japan

[2] Kyushu Univ, Grad Sch Engn Sci, Fukuoka 8168580, Japan

[3] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2012年 / 3卷 / 16期

关键词：

CHEMICAL-VAPOR-DEPOSITION; FIELD-EFFECT TRANSISTORS; LAYER GRAPHENE; EPITAXIAL GRAPHENE; CARBON NANOTUBES; DOMAIN-STRUCTURE; HIGH-QUALITY; FILMS; TRANSPARENT; NANORIBBONS;

D O I：

10.1021/jz3007029

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

For electronic applications, synthesis of large-area, single-layer graphene with high crystallinity is required. One of the most promising and widely employed methods is chemical vapor deposition (CVD) using Cu foil/film as the catalyst However, the CVD graphene is generally polycrystalline and contains a significant amount of domain boundaries that limit intrinsic physical properties of graphene. In this Perspective, we discuss the growth mechanism of graphene on a Cu catalyst and review recent development in the observation and control of the domain structure of graphene. We emphasize the importance of the growth condition and crystallinity of the Cu catalyst for the realization of large area, single crystalline graphene.

引用

页码：2228 / 2236

页数：9