Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

被引：10

作者：

Elsass, CR

Poblenz, C

Heying, B

Fini, P

Petroff, PM

DenBaars, SP

Mishra, UK

Speck, JS ^{[1
]}

Saxler, A

Elhamrib, S

Mitchel, WC

机构：

[1] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA

[2] USAF, RL, MLPS, Wright Patterson AFB, OH 45433 USA

[3] Univ Dayton, Dept Phys, Dayton, OH 45469 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 11期

关键词：

gallium nitride; aluminum gallium nitride; heterostructure; nitrides; mobility; transport; molecular beam epitaxy; 2DEG; sapphire;

D O I：

10.1143/JJAP.40.6235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of Al0.05Ga0.95N cap thickness and growth temperature on the electrical properties of the Al0.05Ga0.95/GaN two-dimensional electron gas (2DEG) was investigated. Varying the thickness of the Al0.05Ga0.95N barrier led to regions in which the dominant 2DEG scattering mechanisms were either Coulombic or interface roughness/alloy disorder scattering. The 2DEG sheet carrier concentration was found to increase with Al0.05Ga0.95N cap thickness and saturated at similar to 25 nm. By increasing the growth temperature from 650 degreesC to 750 degreesC. the measured low temperature 2DEG sheet carrier concentration was found to decrease and the measured low temperature mobility was found to increase while the Al composition remained constant. Temperature dependent Hall measurements revealed that by increasing the growth temperature, the incorporation of impurities is decreased. A maximum 77 K mobility of similar to 19,000 cm(2)/Vs was observed for films grown at 750 degreesC with 20 nm thick Al0.05Ga0.95N caps.

引用

页码：6235 / 6238

页数：4

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