Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy

被引：45

作者：

Elsass, CR ^{[1
]}

Mates, T

Heying, B

Poblenz, C

Fini, P

Petroff, PM

DenBaars, SP

Speck, JS

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 20期

关键词：

D O I：

10.1063/1.1325398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using secondary ion mass spectroscopy we have shown that oxygen incorporation in AlGaN films is dependent upon the III/V growth conditions and the growth temperature of the films. AlGaN films grown under excess group III conditions (Ga-rich) exhibited step flow growth and at least a factor of 3 less oxygen incorporation than films grown under excess group V (N-rich conditions). We found that oxygen incorporation into AlGaN decreases as the growth temperature is increased. The lowest oxygen levels were achieved by growing at 750 degreesC under Ga-rich growth conditions. Possible sources of unwanted oxygen are discussed. (C) 2000 American Institute of Physics. [S0003-6951(00)01346-2].

引用

页码：3167 / 3169

页数：3

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