Controlled solder interdiffusion for high power semiconductor laser diode die bonding

被引:32
作者
Merritt, SA [1 ]
Heim, PJS [1 ]
Cho, SH [1 ]
Dagenais, M [1 ]
机构
[1] UNIV MARYLAND, DEPT ELECT ENGN, COLLEGE PK, MD 20742 USA
来源
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART B-ADVANCED PACKAGING | 1997年 / 20卷 / 02期
关键词
angle-facet; die bonding; high power; interdiffusion; optical amplifiers; semiconductor laser diodes; specific thermal resistance;
D O I
10.1109/96.575565
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High power semiconductor laser diodes and optical power amplifiers have important roles in solid state laser and optical fiber pumping, optical storage and recording, and can serve as efficient sources for medical and display applications, These high power devices must be mounted in the epitaxy-side down configuration for good heat transfer and so require a well-controlled, high yield, void-free, die attach method, We have developed a method which consistently yields absolute thermal resistances of 1.5 degrees C/W (+/-4%) on tapered angle facet semiconductor optical amplifiers and specific thermal resistances of 0.004 degrees K.cm(2)/W for lasers and optical amplifiers mounted on oxygen free high conductivity (OFHC) copper heatsinks, Our method has wide process margins, exhibits excellent yield (>95%, N = 30) and repeatability, relaxes the requirements for highly polished heatsinks, and is well suited for laser die attach to heatspreading diamond submounts or advanced composite materials.
引用
收藏
页码:141 / 145
页数:5
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