Wet chemical nitridation of GaAs (100) by hydrazine solution for surface passivation

被引：47

作者：

Berkovits, VL

Ulin, VP

Losurdo, M

Capezzuto, P

Bruno, G

Perna, G

Capozzi, V

机构：

[1] CNR, Ist Metodol Inorgan & Plasmi, I-70126 Bari, Italy

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Univ Bari, Dipartmento Fis, I-70126 Bari, Italy

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 20期

关键词：

D O I：

10.1063/1.1479212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A mild wet nitridation procedure using hydrazine-based solutions has been developed for GaAs (100) surface passivation. Both x-ray photoelectron spectroscopy and spectroscopic ellipsometry show that this nitridation procedure results in a very thin, coherent, and homogeneous GaN layer that is very stable in air. Photoluminescence data show a strong enhancement of the intensity as compared to that of an as-cleaned GaAs sample, indicating that this nitrided layer provides both chemical and electronic passivation of GaAs surfaces. The chemical mechanism of nitridation is discussed. (C) 2002 American Institute of Physics.

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页码：3739 / 3741

页数：3

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