REAL-TIME MONITORING OF LOW-TEMPERATURE HYDROGEN PLASMA PASSIVATION OF GAAS

被引:58
作者
GOTTSCHO, RA
PREPPERNAU, BL
PEARTON, SJ
EMERSON, AB
GIAPIS, KP
机构
[1] AT and T Bell Laboratories, Murray Hill
关键词
D O I
10.1063/1.346813
中图分类号
O59 [应用物理学];
学科分类号
摘要
By monitoring photoluminescence (PL) in real time and in situ, hydrogen plasma operating conditions have been optimized for surface passivation of native-oxide-contaminated GaAs. PL enhancement is critically dependent on exposure time and pressure because of competition between plasma passivation and damage. Optimal exposure time and pressure are inversely related; thus, previous reports of ineffective passivation at room temperature result from overexposure at low pressure. Plasma treatment is effective in removing As to leave a Ga-rich oxide; removal of excess As increases the photoluminescence yield as the corresponding near-midgap-state density is reduced. Passivation is stable for more than a month. These results demonstrate the power of real time monitoring for optimizing plasma processing of optoelectronic materials.
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页码:440 / 445
页数:6
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