INVESTIGATIONS OF AMMONIUM SULFIDE SURFACE TREATMENTS ON GAAS

被引：109

作者：

CARPENTER, MS ^{[1
]}

MELLOCH, MR ^{[1
]}

COWANS, BA ^{[1
]}

DARDAS, Z ^{[1
]}

DELGASS, WN ^{[1
]}

机构：

[1] PURDUE UNIV,DEPT CHEM ENGN,W LAFAYETTE,IN 47907

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584612

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：845 / 850

页数：6

共 25 条

[1] ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY FOR THE CHARACTERIZATION OF GAAS(001) SURFACES [J].

ALNOT, P ;

OLIVIER, J ;

WYCZISK, F ;

FADLEY, CS .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1987, 43 (3-4) :263-286

[2] EFFECT OF SODIUM SULFIDE TREATMENT ON BAND BENDING IN GAAS [J].

BESSER, RS ;

HELMS, CR .

APPLIED PHYSICS LETTERS, 1988, 52 (20) :1707-1709

[3] UNPINNED SCHOTTKY-BARRIER FORMATION AT METAL GAAS INTERFACES [J].

BRILLSON, LJ ;

VITURRO, RE ;

MAILHIOT, C ;

SHAW, JL ;

TACHE, N ;

MCKINLEY, J ;

MARGARITONDO, G ;

WOODALL, JM ;

KIRCHNER, PD ;

PETTIT, GD ;

WRIGHT, SL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1263-1269

[4] EFFECTS OF NA2S AND (NH4)2S EDGE PASSIVATION TREATMENTS ON THE DARK CURRENT-VOLTAGE CHARACTERISTICS OF GAASPN DIODES [J].

CARPENTER, MS ;

MELLOCH, MR ;

LUNDSTROM, MS ;

TOBIN, SP .

APPLIED PHYSICS LETTERS, 1988, 52 (25) :2157-2159

[5] SCHOTTKY-BARRIER FORMATION ON (NH4)2S-TREATED N-TYPE AND P-TYPE (100)GAAS [J].

CARPENTER, MS ;

MELLOCH, MR ;

DUNGAN, TE .

APPLIED PHYSICS LETTERS, 1988, 53 (01) :66-68

[6]

CARPENTER MS, 1988, 1988 INT S GAAS REL

[7] METAL-DEPENDENT SCHOTTKY-BARRIER HEIGHT WITH THE (NH4)2SX-TREATED GAAS [J].

FAN, JF ;

OIGAWA, H ;

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2125-L2127

[8]

HASEGAWA H, 1988, 20TH C SOL STAT DEV, P259

[9]

KWEI CM, 1988, SURF INTERFACE ANAL, V10, P60

[10] DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF GAAS SURFACE-STATES TREATED WITH INORGANIC SULFIDES [J].

LIU, D ;

ZHANG, T ;

LARUE, RA ;

HARRIS, JS ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1988, 53 (12) :1059-1061

← 1 2 3 →