NH3-PLASMA-NITRIDATION PROCESS OF (100)GAAS SURFACE OBSERVED BY ANGLE-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：35

作者：

MASUDA, A ^{[1
]}

YONEZAWA, Y ^{[1
]}

MORIMOTO, A ^{[1
]}

SHIMIZU, T ^{[1
]}

机构：

[1] IND RES INST ISHIKAWA, KANAZAWA, ISHIKAWA 92002, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

(100) GAAS; SURFACE-NITRIDATION PROCESS; NH3 PLASMA TREATMENT WITH MAGNETIC FIELD; ANGLE-DEPENDENT X-RAY PHOTOELECTRON SPECTROSCOPY; GAN LAYER; OXIDATION RESISTANCE; SURFACE PASSIVATION;

D O I：

10.1143/JJAP.34.1075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray photoelectron spectroscopy with varying the photoelectron take-off angle reveals the surface-nitridation process of (100) GaAs by an rf NH3 plasma with a magnetic field. The plasma treatment for shorter time or at lower temperature leads to the formation of a Ga-As-N ternary-compound layer on the GaAs surface. Increasing the treatment time or treatment temperature changes the main part of the surface layer into GaN due to the desorption of As. The oxidation resistance is also examined, showing that this plasma-nitridation method is one of the promising technologies for the passivation of (100) CaAs surface.

引用

页码：1075 / 1079

页数：5

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