SPECTROSCOPIC STUDY ON N2O-PLASMA OXIDATION OF HYDROGENATED AMORPHOUS-SILICON AND BEHAVIOR OF NITROGEN

被引：21

作者：

MASUDA, A ^{[1
]}

FUKUSHI, I ^{[1
]}

YONEZAWA, Y ^{[1
]}

MINAMIKAWA, T ^{[1
]}

MORIMOTO, A ^{[1
]}

KUMEDA, M ^{[1
]}

SHIMIZU, T ^{[1
]}

机构：

[1] IND RES INST ISHIKAWA PREFECTURE,KANAZAWA 92002,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 6A期

关键词：

N2O-PLASMA OXIDATION; OXIDE THICKNESS; ESR; INTERFACIAL NEUTRAL DEFECT DENSITY; AUGER ELECTRON SPECTROSCOPY; ANGLE-DEPENDENT X-RAY PHOTOELECTRON SPECTROSCOPY; SIO2/A-SIH INTERFACE; ACCUMULATION OF N; OPTICAL EMISSION SPECTROSCOPY; ATOMIC-O;

D O I：

10.1143/JJAP.32.2794

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel oxidation process in hydrogenated amorphous silicon (a-Si:H) utilizing nitrous oxide (N2O) plasma was established and studied in detail. The interfacial neutral defect density for the sample prepared in this process at 300-degrees-C is greatly reduced compared with that obtained using O2 Plasma. The distribution and behavior of N incorporated in this oxide was examined in detail by means of X-ray photoelectron spectroscopy (XPS). As a result, the accumulation of N near the SiO2/a-Si:H interface was confirmed. At low oxidation temperature, the N bonded to O exists near the oxide surface. The reasons for the reduction of the interfacial neutral defect density and for the accumulation of N near the interface are also shown. It is also clarified that this process utilizes the advantages of both the effect of atomic O and the accumulation of N near the interface.

引用

页码：2794 / 2802

页数：9

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