STUDY OF THE COMPOSITION OF THIN DIELECTRICS GROWN ON SI IN A PURE N2O AMBIENT

被引：39

作者：

CHU, TY

TING, W

AHN, JH

LIN, S

KWONG, DL

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 12期

关键词：

D O I：

10.1063/1.105323

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The composition of ultrathin oxides grown on both [100] and [111]Si substrates in pure N2O in a conventional furnace has been studied using Auger electron spectroscopy (AES) analysis, chemical etching, and electrical measurements. Results show a peak nitrogen concentration at the Si-SiO2 interface which decreases from the Si-SiO2 interface to the oxide surface. This nitrogen distribution is responsible for superior electrical properties of metal-oxide-semiconductor (MOS) devices with these films as gate dielectrics.

引用

页码：1412 / 1414

页数：3

共 14 条

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