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HYDROGEN-SULFIDE PLASMA PASSIVATION OF GALLIUM-ARSENIDE

被引：49
作者：
HERMAN, JS
TERRY, FL
机构：
[1] Center for High Frequency Microelectronics, Electrical Engineering and Computer Science Department, University of Michigan, Ann Arbor
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 06期
关键词：
D O I：
10.1063/1.106547
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Improvement in the electrical properties of the GaAs surface has been accomplished using a room-temperature hydrogen sulfide plasma. The surface has then been protected by a 300-degrees-C plasma enhanced chemical vapor deposition (PECVD) SiO2 film. This treatment is highly reproducible due to computer control of process parameters and long-lasting due to the SiO2 cap. Improved C-V characteristics were observed, showing interface trap densities in the high 10(11) cm-2 eV-1 range. Photoluminescence (PL) measurements on the sulfided samples showed increased intensity over the untreated samples.
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页码：716 / 717
页数：2
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