Growth of tantalum nitride films on Si by radio frequency reactive sputtering:: Effect of N2/Ar flow ratio

被引：35

作者：

Lin, JC ^{[1
]}

Chen, G ^{[1
]}

Lee, C ^{[1
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Chem Engn, Taipei, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 05期

关键词：

D O I：

10.1149/1.1391852

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Tantalum nitride (TaN) films are deposited on silicon substrates by radio frequency reactive sputtering of Ta in N-2/Ar gas mixtures. The deposition rate, chemical composition, and crystalline microstructure are investigated by cross-sectional transmission electron microscopy, X-ray photoelectron spectroscopy, Auger electron spectroscopy, X-ray diffraction, and atomic force microscopy, respectively. Those results indicate that the deposition rate, film composition, and microstructure correlate well with the N2/Ar flow ratio. The deposition mechanism and kinetic model which control the film characteristics are presented as well. (C) 1999 The Electrochemical Society. S0013-4651(98)07-075-X. All rights reserved.

引用

页码：1835 / 1839

页数：5

共 19 条

[1] ENHANCEMENT OF TA+ FLUX BY SUBSTRATE BIASING DURING SPUTTER DEPOSITION OF TANTALUM NITROGEN FILMS [J].

AITA, CR ;

MYERS, TA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :348-351

[2] TANTALUM NITRIDE AS A DIFFUSION BARRIER BETWEEN PD2SI OR COSI2 AND ALUMINUM [J].

FAROOQ, MA ;

MURARKA, SP ;

CHANG, CC ;

BAIOCCHI, FA .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (08) :3017-3022

[3] EFFECTS OF NITROGEN METHANE + OXYGEN ON STRUCTURE + ELECTRICAL PROPERTIES OF THIN TANTALUM FILMS [J].

GERSTENBERG, D ;

CALBICK, CJ .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :402-&

[4] TANTALUM AS A DIFFUSION BARRIER BETWEEN COPPER AND SILICON - FAILURE MECHANISM AND EFFECT OF NITROGEN ADDITIONS [J].

HOLLOWAY, K ;

FRYER, PM ;

CABRAL, C ;

HARPER, JME ;

BAILEY, PJ ;

KELLEHER, KH .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (11) :5433-5444

[5] INVESTIGATION OF REACTIVELY SPUTTERED TIN FILMS FOR DIFFUSION-BARRIERS [J].

KANAMORI, S .

THIN SOLID FILMS, 1986, 136 (02) :195-214

[6] PROPERTIES OF DIRECT-CURRENT MAGNETRON REACTIVELY SPUTTERED TAN [J].

MEHROTRA, B ;

STIMMELL, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06) :1736-1740

[7]

Moulder J.F., 1979, HDB XRAY PHOTOELECTR

[8] DIFFUSION BARRIERS IN THIN-FILMS [J].

NICOLET, MA .

THIN SOLID FILMS, 1978, 52 (03) :415-443

[9] AUGER-ELECTRON SPECTROSCOPY STUDY ON THE STABILITY AND THE INTERFACIAL REACTION OF TA, TA-N AND TAN FILMS AS A DIFFUSION BARRIER BETWEEN CU9AL4 FILM AND SI [J].

NOYA, A ;

SASAKI, K ;

TAKEYAMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (02) :911-915

[10] Diffusion barrier property of TaN between Si and Cu [J].

Oku, T ;

Kawakami, E ;

Uekubo, M ;

Takahiro, K ;

Yamaguchi, S ;

Murakami, M .

APPLIED SURFACE SCIENCE, 1996, 99 (04) :265-272

← 1 2 →