Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors

被引：89

作者：

Raja, Jayapal ^{[1
]}

Jang, Kyungsoo ^{[1
]}

Balaji, Nagarajan ^{[2
]}

Choi, Woojin ^{[1
]}

Thanh Thuy Trinh ^{[1
]}

Yi, Junsin ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, Coll Informat & Commun Engn, Sch Elect Elect Engn, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

CHANNEL LAYER; NITROGEN;

D O I：

10.1063/1.4793535

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stability of negative bias temperature stress (NBTS) of nitrogen doped amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) is investigated. Undoped a-IGZO TFT stressed at 333K exhibit a larger negative Delta V-TH (-3.21 V) with an unpredictable sub-threshold swing (SS) of hump shaped transfer curve due to the creation of meta-stable traps. Defects related hump formation has disappeared with small Delta V-TH (-1.13 V) and Delta SS (0.018 V/dec) in nitrogen doped a-IGZO TFT. It is observed that nitrogen doping enhances device stability by well controlled oxygen vacancy and trap sites in channel and channel/dielectric interface. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793535]

引用

页数：4

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