Highly Transparent p-Type ZnO Thin Films Prepared by Non-Toxic Sol-Gel Process

被引：8

作者：

Chuang, Chia-Lin ^{[1
]}

Wang, Wen-Jie

Wang, Chung-Yen

Tseng, Wei-Hsuan

Wu, Chih-I

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2012年 / 15卷 / 06期

关键词：

ELECTRICAL-PROPERTIES; HYDROGEN; TEMPERATURE; NITROGEN;

D O I：

10.1149/2.025206esl

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In-N co-doped p-type ZnO thin films were demonstrated using a non-toxic sal-gel spin coating process. The resistivity of the p-type ZnO films is 4.43 Omega cm with the carrier concentration of 1.36 x 10(18) cm(-3) at room temperature. The X-ray photoelectron spectra of N 1s core level measured with an Al K alpha photon line identify the existence of nitrogen in the p-type ZnO. The secondary ion mass spectrometry depth profile also confirms the nitrogen contents in the In-N co-doped films. In addition, the In-N co-doped film with a thickness of 200 nm has a high transparency about 90% in the visible region. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.025206esl] All rights reserved.

引用

页码：H195 / H197

页数：3

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