Highly Transparent p-Type ZnO Thin Films Prepared by Non-Toxic Sol-Gel Process

被引：8

作者：

Chuang, Chia-Lin ^{[1
]}

Wang, Wen-Jie

Wang, Chung-Yen

Tseng, Wei-Hsuan

Wu, Chih-I

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2012年 / 15卷 / 06期

关键词：

ELECTRICAL-PROPERTIES; HYDROGEN; TEMPERATURE; NITROGEN;

D O I：

10.1149/2.025206esl

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In-N co-doped p-type ZnO thin films were demonstrated using a non-toxic sal-gel spin coating process. The resistivity of the p-type ZnO films is 4.43 Omega cm with the carrier concentration of 1.36 x 10(18) cm(-3) at room temperature. The X-ray photoelectron spectra of N 1s core level measured with an Al K alpha photon line identify the existence of nitrogen in the p-type ZnO. The secondary ion mass spectrometry depth profile also confirms the nitrogen contents in the In-N co-doped films. In addition, the In-N co-doped film with a thickness of 200 nm has a high transparency about 90% in the visible region. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.025206esl] All rights reserved.

引用

页码：H195 / H197

页数：3

共 28 条

[11] Growth of epitaxial p-type ZnO thin films by codoping of Ga and N [J].

Kumar, Manoj ;

Kim, Tae-Hwan ;

Kim, Sang-Sub ;

Lee, Byung-Teak .

APPLIED PHYSICS LETTERS, 2006, 89 (11)

[12] Near-edge x-ray absorption fine structure and x-ray photoemission spectroscopy study of the InN epilayers on sapphire(0001) substrate [J].

Lee, IJ ;

Kim, JY ;

Shin, HJ ;

Kim, HK .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (10) :5540-5544

[13] ZnO nanowires array p-n homojunction and its application as a visible-blind ultraviolet photodetector [J].

Leung, Y. H. ;

He, Z. B. ;

Luo, L. B. ;

Tsang, C. H. A. ;

Wong, N. B. ;

Zhang, W. J. ;

Lee, S. T. .

APPLIED PHYSICS LETTERS, 2010, 96 (05)

[14] Low-resistivity and transparent indium-oxide-doped ZnO ohmic contact to p-type GaN [J].

Lim, JH ;

Hwang, DK ;

Kim, HS ;

Oh, JY ;

Yang, JH ;

Navamathavan, R ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2004, 85 (25) :6191-6193

[15] The effect of annealing processes on electronic properties of sol-gel derived Al-doped ZnO films [J].

Lin, Jen-Po ;

Wu, Jenn-Ming .

APPLIED PHYSICS LETTERS, 2008, 92 (13)

[16] Improvement of electrical properties of sol-gel derived ZnO:Ga films by infrared heating method [J].

Lin, Keh-moh ;

Chen, Yu-Yu .

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2009, 51 (02) :215-221

[17] Aluminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering system [J].

Liu, Day-Shan ;

Sheu, Chia-Sheng ;

Lee, Ching-Ting .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (03)

[18] Electrical properties of bulk ZnO [J].

Look, DC ;

Reynolds, DC ;

Sizelove, JR ;

Jones, RL ;

Litton, CW ;

Cantwell, G ;

Harsch, WC .

SOLID STATE COMMUNICATIONS, 1998, 105 (06) :399-401

[19] Roles of hydrogen and nitrogen in p-type doping of ZnO [J].

Lu, J. G. ;

Fujita, S. ;

Kawaharamura, T. ;

Nishinaka, H. .

CHEMICAL PHYSICS LETTERS, 2007, 441 (1-3) :68-71

[20] p-type conduction in N-Al co-doped ZnO thin films [J].

Lu, JG ;

Ye, ZZ ;

Zhuge, F ;

Zeng, YJ ;

Zhao, BH ;

Zhu, LP .

APPLIED PHYSICS LETTERS, 2004, 85 (15) :3134-3135

← 1 2 3 →