Roles of hydrogen and nitrogen in p-type doping of ZnO

被引：29

作者：

Lu, J. G. ^{[1
]}

Fujita, S.

Kawaharamura, T.

Nishinaka, H.

机构：

[1] Kyoto Univ, Int Innovat Ctr, Nishikyo Ku, Kyoto 6158520, Japan

[2] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

来源：

CHEMICAL PHYSICS LETTERS | 2007年 / 441卷 / 1-3期

基金：

日本学术振兴会;

关键词：

D O I：

10.1016/j.cplett.2007.04.085

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

N-doped ZnO thin films were prepared by atmospheric pressure mist chemical vapor deposition. The behaviors of H and N impurities were systematically studied, and a hydrogen-assisted nitrogen-doping mechanism was proposed to produce p-type ZnO. The H and N concentrations showed a linear correlation in as-grown samples. The p-type conductivity was realized by rapid thermal annealing in N-2 environment, with the hole concentrations typically of 10(17) cm(-3) at 475-500 degrees C. In this temperature window the dissociated hydrogen showed significant outdiffusion, while the nitrogen still remained stable in ZnO and behaved as effective acceptors resulting in good p-type conductivity. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：68 / 71

页数：4

共 25 条

[1] p-type behavior in In-N codoped ZnO thin films -: art. no. 252106 [J].

Chen, LL ;

Lu, JG ;

Ye, ZZ ;

Lin, YM ;

Zhao, BH ;

Ye, YM ;

Li, JS ;

Zhu, LP .

APPLIED PHYSICS LETTERS, 2005, 87 (25) :1-3

[2] Molecular nitrogen (N2-) acceptors and isolated nitrogen (N-) acceptors in ZnO crystals [J].

Garces, NY ;

Wang, LJ ;

Giles, NC ;

Halliburton, LE ;

Cantwell, G ;

Eason, DB .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (01) :519-524

[3] Effect of annealing in oxygen radicals on luminescence and electrical conductivity of ZnO:N films [J].

Georgobiani, AN ;

Gruzintsev, AN ;

Volkov, VT ;

Vorob'ev, MO .

SEMICONDUCTORS, 2002, 36 (03) :265-269

[4] Thermal stability of ion-implanted hydrogen in ZnO [J].

Ip, K ;

Overberg, ME ;

Heo, YW ;

Norton, DP ;

Pearton, SJ ;

Kucheyev, SO ;

Jagadish, C ;

Williams, JS ;

Wilson, RG ;

Zavada, JM .

APPLIED PHYSICS LETTERS, 2002, 81 (21) :3996-3998

[5] Infrared spectroscopy of polycrystalline ZnO and ZnO:N thin films [J].

Keyes, BM ;

Gedvilas, LM ;

Li, X ;

Coutts, TJ .

JOURNAL OF CRYSTAL GROWTH, 2005, 281 (2-4) :297-302

[6] High electron concentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapid-thermal annealing [J].

Kim, KK ;

Niki, S ;

Oh, JY ;

Song, JO ;

Seong, TY ;

Park, SJ ;

Fujita, S ;

Kim, SW .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[7] Possible p-type doping with group-I elements in ZnO -: art. no. 115210 [J].

Lee, EC ;

Chang, KJ .

PHYSICAL REVIEW B, 2004, 70 (11) :115210-1

[8] Compensation mechanism for N acceptors in ZnO [J].

Lee, EC ;

Kim, YS ;

Jin, YG ;

Chang, KJ .

PHYSICAL REVIEW B, 2001, 64 (08)

[9] Hydrogen passivation effect in nitrogen-doped ZnO thin films [J].

Li, XN ;

Keyes, B ;

Asher, S ;

Zhang, SB ;

Wei, SH ;

Coutts, TJ ;

Limpijumnong, S ;

Van de Walle, CG .

APPLIED PHYSICS LETTERS, 2005, 86 (12) :1-3

[10] Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy [J].

Look, DC ;

Reynolds, DC ;

Litton, CW ;

Jones, RL ;

Eason, DB ;

Cantwell, G .

APPLIED PHYSICS LETTERS, 2002, 81 (10) :1830-1832

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