Possible p-type doping with group-I elements in ZnO -: art. no. 115210

被引：226

作者：

Lee, EC ^{[1
]}

Chang, KJ ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.70.115210

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Based on first-principles calculations, we suggest a method for fabricating p-type ZnO with group-I elements such as Li and Na. With group-I dopants alone, substitutional acceptors are mostly self-compensated by interstitial donors. In ZnO codoped with H impurities, the formation of compensating interstitials is severely suppressed, and the acceptor solubility is greatly enhanced by forming H-acceptor complexes. The H atoms can be easily dissociated from these defect complexes at relatively low annealing temperatures, and thus low-resistivity p-type ZnO is achievable with dopants different from group-V elements.

引用

页码：115210 / 1

页数：4

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