p-type behavior in In-N codoped ZnO thin films -: art. no. 252106

被引：107

作者：

Chen, LL ^{[1
]}

Lu, JG ^{[1
]}

Ye, ZZ ^{[1
]}

Lin, YM ^{[1
]}

Zhao, BH ^{[1
]}

Ye, YM ^{[1
]}

Li, JS ^{[1
]}

Zhu, LP ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 25期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2146309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

p-type ZnO thin films have been realized by the In-N codoping method. Secondary ion mass spectroscopy revealed that the nitrogen incorporation was enhanced by the presence of indium in ZnO. The as-grown In-N codoped ZnO film shows acceptable p-type behavior at room temperature with high film quality. A conversion from p-type conduction to n type in a range of temperature was confirmed by Hall effect measurement. The lowest reliable room-temperature resistivity was found to be 3.12 Omega cm with a carrier concentration of 2.04x10(18) cm(-3) and a Hall mobility of 0.979 cm(2) V-1 S-1. The p-type behavior is stable. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 15 条

[1]

Aoki T, 2002, PHYS STATUS SOLIDI B, V229, P911, DOI 10.1002/1521-3951(200201)229:2<911::AID-PSSB911>3.0.CO

[2]

2-R

[3] Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[4] Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis [J].

Bian, JM ;

Li, XM ;

Gao, XD ;

Yu, WD ;

Chen, LD .

APPLIED PHYSICS LETTERS, 2004, 84 (04) :541-543

[5] Room-temperature ultraviolet nanowire nanolasers [J].

Huang, MH ;

Mao, S ;

Feick, H ;

Yan, HQ ;

Wu, YY ;

Kind, H ;

Weber, E ;

Russo, R ;

Yang, PD .

SCIENCE, 2001, 292 (5523) :1897-1899

[6] p-type electrical conduction in ZnO thin films by Ga and N codoping [J].

Joseph, M ;

Tabata, H ;

Kawai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (11A) :L1205-L1207

[7] DEEP ENERGY-LEVELS OF DEFECTS IN THE WURTZITE SEMICONDUCTORS ALN, CDS, CDSE, ZNS, AND ZNO [J].

KOBAYASHI, A ;

SANKEY, OF ;

DOW, JD .

PHYSICAL REVIEW B, 1983, 28 (02) :946-956

[8] Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy [J].

Look, DC ;

Reynolds, DC ;

Litton, CW ;

Jones, RL ;

Eason, DB ;

Cantwell, G .

APPLIED PHYSICS LETTERS, 2002, 81 (10) :1830-1832

[9] p-type conduction in N-Al co-doped ZnO thin films [J].

Lu, JG ;

Ye, ZZ ;

Zhuge, F ;

Zeng, YJ ;

Zhao, BH ;

Zhu, LP .

APPLIED PHYSICS LETTERS, 2004, 85 (15) :3134-3135

[10] Cluster-doping approach for wide-gap semiconductors:: The case of p-type ZnO -: art. no. 256401 [J].

Wang, LG ;

Zunger, A .

PHYSICAL REVIEW LETTERS, 2003, 90 (25) :4

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