p-type conduction in N-Al co-doped ZnO thin films

被引：220

作者：

Lu, JG ^{[1
]}

Ye, ZZ ^{[1
]}

Zhuge, F ^{[1
]}

Zeng, YJ ^{[1
]}

Zhao, BH ^{[1
]}

Zhu, LP ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 15期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.1803935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

p-type ZnO thin films have been realized by the N-Al co-doping method. Secondary ion mass spectroscopy demonstrated that the N incorporation was enhanced evidently by the presence of Al in ZnO. The lowest room-temperature resistivity was found to be 57.3 Omega cm with a Hall mobility of 0.43 cm(2)/V s and carrier concentration of 2.25 X 10(17) cm(-3) for the N-Al co-doped p-type ZnO film deposited on glass substrate. The results were much better than those for the N-doped p-type. ZnO. Moreover, the co-doped film possesses a good crystallinity with c-axis orientation and a high transmittance (90%) in the visible region. (C) 2004 American Institute Physics.

引用

页码：3134 / 3135

页数：2

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