Growth of epitaxial p-type ZnO thin films by codoping of Ga and N

被引：100

作者：

Kumar, Manoj ^{[1
]}

Kim, Tae-Hwan ^{[1
]}

Kim, Sang-Sub ^{[1
]}

Lee, Byung-Teak ^{[1
]}

机构：

[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Photon & Elect Thin Film Lab, Kwangju 500757, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 11期

关键词：

D O I：

10.1063/1.2338527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Codoping of Ga and N was utilized to realize p-type conduction in ZnO films using rf magnetron sputtering. The films obtained at 550 degrees C on sapphire showed resistivity and hole concentrations of 38 Omega cm and 3.9x10(17) cm(-3), respectively. ZnO films also showed a p-type behavior on p-Si with better electrical properties. ZnO homojunctions synthesized by in situ deposition of Ga-N codoped p-ZnO layer on Ga doped n-ZnO layer showed clear p-n diode characteristics. Low temperature photoluminescence spectra of codoped films also revealed a dominant peak at 3.12 eV. The codoped films showed a dense columnar structure with a c-axis preferred orientation. (c) 2006 American Institute of Physics.

引用

收藏

页数：3

相关论文

共 21 条

[1] Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis [J].

Bian, JM ;

Li, XM ;

Gao, XD ;

Yu, WD ;

Chen, LD .

APPLIED PHYSICS LETTERS, 2004, 84 (04) :541-543

[2] p-type behavior in In-N codoped ZnO thin films -: art. no. 252106 [J].

Chen, LL ;

Lu, JG ;

Ye, ZZ ;

Lin, YM ;

Zhao, BH ;

Ye, YM ;

Li, JS ;

Zhu, LP .

APPLIED PHYSICS LETTERS, 2005, 87 (25) :1-3

[3] Preparation of intrinsic and N-doped p-type ZnO thin films by metalorganic vapor phase epitaxy -: art. no. 213103 [J].

Du, GT ;

Ma, Y ;

Zhang, YT ;

Yang, TP .

APPLIED PHYSICS LETTERS, 2005, 87 (21) :1-3

[4] p-Type ZnO:N obtained by ion implantation of nitrogen with post-implantation annealing in oxygen radicals [J].

Georgobiani, AN ;

Gruzintsev, AN ;

Volkov, VT ;

Vorobiev, MO ;

Demin, VI ;

Dravin, VA .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 514 (1-3) :117-121

[5] Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering -: art. no. 151917 [J].

Hwang, DK ;

Kim, HS ;

Lim, JH ;

Oh, JY ;

Yang, JH ;

Park, SJ ;

Kim, KK ;

Look, DC ;

Park, YS .

APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3

[6] BLUE-GREEN INJECTION-LASER DIODES IN (ZN,CD)SE/ZNSE QUANTUM-WELLS [J].

JEON, H ;

DING, J ;

PATTERSON, W ;

NURMIKKO, AV ;

XIE, W ;

GRILLO, DC ;

KOBAYASHI, M ;

GUNSHOR, RL .

APPLIED PHYSICS LETTERS, 1991, 59 (27) :3619-3621

[7]

Joeph M, 2001, PHYSICA B, V302, P140

[8] Optical and electrical properties of ZnO doped with nitrogen [J].

Kang, S ;

Shin, K ;

Prabakar, K ;

Lee, C .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (12) :2830-2834

[9] Electrical properties of bulk ZnO [J].

Look, DC ;

Reynolds, DC ;

Sizelove, JR ;

Jones, RL ;

Litton, CW ;

Cantwell, G ;

Harsch, WC .

SOLID STATE COMMUNICATIONS, 1998, 105 (06) :399-401

[10] Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy [J].

Look, DC ;

Reynolds, DC ;

Litton, CW ;

Jones, RL ;

Eason, DB ;

Cantwell, G .

APPLIED PHYSICS LETTERS, 2002, 81 (10) :1830-1832