Preparation of intrinsic and N-doped p-type ZnO thin films by metalorganic vapor phase epitaxy -: art. no. 213103

被引：102

作者：

Du, GT

Ma, Y

Zhang, YT

Yang, TP

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

[2] Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Electron, Dept Phys, Dalian 116023, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 21期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2132528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The intrinsic p-type ZnO thin films were prepared by controlling the oxygen partial pressure during growth. The E-2 (high) mode at 432.2 cm(-1) appeared in the Raman spectrum of the film. The photoluminescence spectra taken at 77 K showed the emission band C in the violet region, which originated from zinc vacancy and varied in intensity in accordance with the quantity of the carrier concentration in the films. The N-doped p-type ZnO films were realized by N-2 plasma. The Raman spectrum showed the dominant A(1) (LO) mode at 580 cm(-1), that was the result of the host-lattice defects generated by N dopant rather than the N-related local vibration modes. (c) 2005 American Institute of Physics.

引用

收藏

页码：1 / 3

页数：3

相关论文

共 20 条

[1] Optically detected magnetic resonance of epitaxial nitrogen-doped ZnO [J].

Aliev, GN ;

Bingham, SJ ;

Wolverson, D ;

Davies, JJ ;

Makino, H ;

Ko, HJ ;

Yao, T .

PHYSICAL REVIEW B, 2004, 70 (11) :115206-1

[2] p-type ZnO films by monodoping of nitrogen and ZnO-based p-n homojunctions [J].

Bian, JM ;

Li, XM ;

Zhang, CY ;

Yu, WD ;

Gao, XD .

APPLIED PHYSICS LETTERS, 2004, 85 (18) :4070-4072

[3] Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li [J].

Bundesmann, C ;

Ashkenov, N ;

Schubert, M ;

Spemann, D ;

Butz, T ;

Kaidashev, EM ;

Lorenz, M ;

Grundmann, M .

APPLIED PHYSICS LETTERS, 2003, 83 (10) :1974-1976

[4] RESONANT RAMAN-SCATTERING IN ZNO [J].

CALLEJA, JM ;

CARDONA, M .

PHYSICAL REVIEW B, 1977, 16 (08) :3753-3761

[5] Molecular nitrogen (N2-) acceptors and isolated nitrogen (N-) acceptors in ZnO crystals [J].

Garces, NY ;

Wang, LJ ;

Giles, NC ;

Halliburton, LE ;

Cantwell, G ;

Eason, DB .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (01) :519-524

[6] Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (01(1)over-bar2) sapphire by metalorganic chemical vapor deposition [J].

Gorla, CR ;

Emanetoglu, NW ;

Liang, S ;

Mayo, WE ;

Lu, Y ;

Wraback, M ;

Shen, H .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) :2595-2602

[7] Raman studies on spintronics materials based on wide bandgap semiconductors [J].

Harima, H .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (48) :S5653-S5660

[8] Nitrogen-related local vibrational modes in ZnO:N [J].

Kaschner, A ;

Haboeck, U ;

Strassburg, M ;

Strassburg, M ;

Kaczmarczyk, G ;

Hoffmann, A ;

Thomsen, C ;

Zeuner, A ;

Alves, HR ;

Hofmann, DM ;

Meyer, BK .

APPLIED PHYSICS LETTERS, 2002, 80 (11) :1909-1911

[9] DEEP ENERGY-LEVELS OF DEFECTS IN THE WURTZITE SEMICONDUCTORS ALN, CDS, CDSE, ZNS, AND ZNO [J].

KOBAYASHI, A ;

SANKEY, OF ;

DOW, JD .

PHYSICAL REVIEW B, 1983, 28 (02) :946-956

[10] Chemical vapor deposition-formed p-type ZnO thin films [J].

Li, X ;

Yan, Y ;

Gessert, TA ;

Perkins, CL ;

Young, D ;

DeHart, C ;

Young, M ;

Coutts, TJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (04) :1342-1346