Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li

被引：613

作者：

Bundesmann, C ^{[1
]}

Ashkenov, N ^{[1
]}

Schubert, M ^{[1
]}

Spemann, D ^{[1
]}

Butz, T ^{[1
]}

Kaidashev, EM ^{[1
]}

Lorenz, M ^{[1
]}

Grundmann, M ^{[1
]}

机构：

[1] Univ Leipzig, Fak Phys & Geowissensch, Inst Expt Phys 2, D-04103 Leipzig, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 10期

关键词：

D O I：

10.1063/1.1609251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polarized micro-Raman measurements were performed to study the phonon modes of Fe, Sb, Al, Ga, and Li doped ZnO thin films, grown by pulsed-laser deposition on c-plane sapphire substrates. Additional modes at about 277, 511, 583, and 644 cm(-1), recently assigned to N incorporation [A. Kaschner , Appl. Phys. Lett. 80, 1909 (2002)], were observed for Fe, Sb, and Al doped films, intentionally grown without N. The mode at 277 cm(-1) occurs also for Ga doped films. These modes thus cannot be related directly to N incorporation. Instead, we suggest host lattice defects as their origin. Further additional modes at 531, 631, and 720 cm(-1) seem specific for the Sb, Ga, and Fe dopants, respectively. Li doped ZnO did not reveal additional modes. (C) 2003 American Institute of Physics.

引用

页码：1974 / 1976

页数：3

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