Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition

Nitrogen doped and non-doped ZnO films are grown by the plasma-assisted metal-organic chemical vapor deposition (MOCVD) on sapphire. X-ray diffraction spectra show that they are both strongly c-oriented while the N-doped sample is of better crystal quality. A strong emission coming from A-exciton is observed at 10 and 77 K photoluminescence (PL) spectra in both samples while deep level transition is hardly observed. More emission peaks are found in the PL spectrum of the N-doped sample relative to that of a non-doped one. Raman scattering is also performed in back scattering configuration. E-2 mode is observed in both samples while A(I(LO)) mode can only be found in the N-doped sample, which indicates that high quality of the N-doped ZnO film. A high resistive ZnO film is obtained by nitrogen doping. (C) 2001 Published by Elsevier Science B.V.