Optical and electrical properties of ZnO doped with nitrogen

被引：7

作者：

Kang, S ^{[1
]}

Shin, K ^{[1
]}

Prabakar, K ^{[1
]}

Lee, C ^{[1
]}

机构：

[1] Inha Univ, Inchon 253, South Korea

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2004年 / 241卷 / 12期

关键词：

D O I：

10.1002/pssb.200405071

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Ultraviolet (UV) and visible photoluminescence (PL) has been achieved at room temperature from ZnO films deposited on the sapphire substrate by RF-magnetron sputtering. The electrical and optical properties of as-deposited and annealed films were investigated as a function of N2O/Ar gas flow ratio. All the ZnO films deposited by sputtering show a typical hexagonal wurtzite crystallographic orientation with a c-axis perpendicular to the substrate surface. The growth rate decreases with the increase of the gas flow ratio. The high carrier mobility and low resistivity films were prepared at a N2O/Ar gas flow ratio of 0.33. The most intense UV and week blue luminescence was observed for the as-deposited films. A strong blue luminescence emission due to oxygen vacancies was obtained from the films annealed at 1000 degreesC.

引用

页码：2830 / 2834

页数：5

共 22 条

[1] Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties [J].