Photoluminescence from ZnO thin films prepared by vapor phase growth

被引：5

作者：

Fujita, T ^{[1
]}

Chen, J ^{[1
]}

Kawaguchi, D ^{[1
]}

机构：

[1] Hiroshima Univ, Grad Sch Engn, Dept Appl Phys, Higashihiroshima 7398527, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 7B期

关键词：

ZnO; photoluminescence; exciton; stimulated emission;

D O I：

10.1143/JJAP.42.L834

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence from ZnO thin films deposited on (0001) sapphire substrates by vapor phase growth using a zinc acetate precursor under four different conditions is studied at 9 K and at room temperature. All the films exhibit an intense band-edge emission and extremely weak deep-level emission at 9 K. Clear free-exciton emission is observed at 9 K even at an excitation density as low. as 20 W/cm(2) on the films annealed at 700degreesC at atmospheric oxygen pressured At room temperature, the integrated intensity ratio of deep-level emission to band-edge emission varies from 1/20 to 1.5 depending on growth conditions. Stimulated emissions due to exciton-exciton scattering and electron-hole plasma are observed at room temperature.

引用

页码：L834 / L836

页数：3

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