Epitaxial growth of ZnO thin films exhibiting room-temperature ultraviolet emission by atmospheric pressure chemical vapor deposition

被引：19

作者：

Kaiya, K

Omichi, K

Takahashi, N

Nakamura, T

Okamoto, S

Yamamoto, H

机构：

[1] Shizuoka Univ, Grad Sch Sci & Engn, Hamamatsu, Shizuoka 4328561, Japan

[2] Shizuoka Univ, Fac Engn, Dept Mat Sci & Technol, Hamamatsu, Shizuoka 4328561, Japan

[3] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan

[4] Tokyo Univ Technol, Dept Engn, Hachioji, Tokyo 1928580, Japan

来源：

THIN SOLID FILMS | 2002年 / 409卷 / 01期

关键词：

ZnO; ZnI2; atmospheric pressure halide vapor phase epitaxy; exciton emission;

D O I：

10.1016/S0040-6090(02)00113-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO films have been grown on sapphire(0001) substrates by means of the atmospheric pressure halide vapor phase epitaxy technique using ZnI2, and O-2 as starting materials. The ZnO films showed a full width at half maximum of the (0002) X-ray peak of 20.2 min and a reflection high-energy electron diffraction pattern similar to that of a single crystal. A band-edge emission at 381.0 nm was observed in the photoluminescence spectra at room temperature. In addition, the crystal quality and optical property of ZnO films are also discussed in comparison with that in the ZnCl2 system. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：116 / 119

页数：4

共 13 条

[1] Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxy [J].