Growth of ZnO thin films exhibiting room-temperature ultraviolet emission by means of atmospheric pressure vapor-phase epitaxy

被引:20
作者
Omichi, K
Kaiya, K
Takahashi, N
Nakamura, T
Okamoto, S
Yamamoto, H
机构
[1] Shizuoka Univ, Fac Engn, Dept Mat Sci & Technol, Shizuoka 4328561, Japan
[2] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan
[3] Tokyo Univ Technol, Dept Engn, Tokyo 1928580, Japan
关键词
D O I
10.1039/b006656g
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Atmospheric pressure vapor-phase epitaxy of ZnO thin films using ZnI2 and O-2 as starting materials has been examined: thin films of ZnO deposited onto sapphire (0001) substrates at 1023 K have smooth surfaces free from cracks; the photoluminescence spectra of the ZnO thin film prepared under atmospheric pressure show for the first time an ultraviolet emission centered at 381.0 nm at room temperature.
引用
收藏
页码:262 / 263
页数:2
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