Growth of a high quality ZnO film on sapphire by atmospheric pressure halide vapor phase epitaxy using ZnO buffer layers

被引：10

作者：

Kaiya, K

Omichi, K

Takahashi, N

Nakamura, T

Okamoto, S

Yamamoto, H

机构：

[1] Shizuoka Univ, Fac Engn, Dept Mat Sci & Technol, Hamamatsu, Shizuoka 4328561, Japan

[2] Tottori Univ, Fac Engn, Dept Elect & Elect Engn, Tottori 6808552, Japan

[3] Tokyo Univ Technol, Dept Engn, Tokyo 1928580, Japan

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2000年 / 10卷 / 04期

关键词：

D O I：

10.1039/a909584e

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Hexagonal ZnO films have been grown on a sapphire(0001) substrate by atmospheric pressure halide vapor phase epitaxy using ZnO buffer layers. The full width at half maximum of the X-ray (0002) diffraction peak for the ZnO films with the buffer layer was found to be smaller than that of the ZnO films without the buffer layer. Reflection high-energy electron diffraction measurements of the former revealed a diffraction pattern similar to that of a single crystal. The photoluminescence spectra showed a strong peak at 370 nm up to 180 K.

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页码：969 / 972

页数：4

相关论文

共 10 条

[1] EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE [J].

AKASAKI, I ;

AMANO, H ;

KOIDE, Y ;

HIRAMATSU, K ;

SAWAKI, N .

JOURNAL OF CRYSTAL GROWTH, 1989, 98 (1-2) :209-219

[2] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[3] Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[4] Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxy [J].

Chen, YF ;

Bagnall, DM ;

Zhu, ZQ ;

Sekiuchi, T ;

Park, KT ;

Hiraga, K ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

JOURNAL OF CRYSTAL GROWTH, 1997, 181 (1-2) :165-169

[5] LUMINESCENCE OF ZNO UNDER HIGH ONE-QUANTUM AND 2-QUANTUM EXCITATION [J].

KLINGSHIRN, C .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 71 (02) :547-556

[6] CROSS-SECTIONAL TEM STUDY OF MICROSTRUCTURES IN MOVPE GAN FILMS GROWN ON ALPHA-AL2O3 WITH A BUFFER LAYER OF ALN [J].

KUWANO, N ;

SHIRAISHI, T ;

KOGA, A ;

OKI, K ;

HIRAMATSU, K ;

AMANO, H ;

ITOH, K ;

AKASAKI, I .

JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) :381-387

[7] GAN GROWTH USING GAN BUFFER LAYER [J].

NAKAMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A) :L1705-L1707

[8] Growth of ZnO on sapphire (0001) by the vapor phase epitaxy using a chloride source [J].

Takahashi, N ;

Kaiya, K ;

Nakamura, T ;

Momose, Y ;

Yamamoto, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (4B) :L454-L456

[9]

TAKAHASHI N, IN PRESS J CRYST GRO

[10] Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature [J].

Zu, P ;

Tang, ZK ;

Wong, GKL ;

Kawasaki, M ;

Ohtomo, A ;

Koinuma, H ;

Segawa, Y .

SOLID STATE COMMUNICATIONS, 1997, 103 (08) :459-463