AP-HVPE growth of ZnO with room-temperature ultraviolet emission

被引：2

作者：

Omichi, K

Takahashi, N

Nakamura, T

Yoshioka, M

Okamoto, S

Yamamoto, H

机构：

[1] Shizuoka Univ, Fac Engn, Dept Mat Sci & Technol, Shizuoka 4328561, Japan

[2] Shizuoka Ind Res Inst Shizuoka Prefecture, Shizuoka 4211298, Japan

[3] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan

[4] Tokyo Univ Technol, Dept Engn, Tokyo 1928580, Japan

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2001年 / 11卷 / 12期

关键词：

D O I：

10.1039/b103467g

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of ZnO were grown on a sapphire(0001) substrate by atmospheric pressure halide vapor phase epitaxy. A double-crystal X-ray diffraction study showed a minimum full width at half maximum of the hexagonal ZnO(0002) line after 1212 s for the film deposited at 1023 K. The room-temperature photoluminescence spectrum displays an ultraviolet emission at 381.0 nm due to the recombination of free excitons.

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收藏

页码：3158 / 3160

页数：3

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