Growth of epitaxial p-type ZnO thin films by codoping of Ga and N

被引：100

作者：

Kumar, Manoj ^{[1
]}

Kim, Tae-Hwan ^{[1
]}

Kim, Sang-Sub ^{[1
]}

Lee, Byung-Teak ^{[1
]}

机构：

[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Photon & Elect Thin Film Lab, Kwangju 500757, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 11期

关键词：

D O I：

10.1063/1.2338527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Codoping of Ga and N was utilized to realize p-type conduction in ZnO films using rf magnetron sputtering. The films obtained at 550 degrees C on sapphire showed resistivity and hole concentrations of 38 Omega cm and 3.9x10(17) cm(-3), respectively. ZnO films also showed a p-type behavior on p-Si with better electrical properties. ZnO homojunctions synthesized by in situ deposition of Ga-N codoped p-ZnO layer on Ga doped n-ZnO layer showed clear p-n diode characteristics. Low temperature photoluminescence spectra of codoped films also revealed a dominant peak at 3.12 eV. The codoped films showed a dense columnar structure with a c-axis preferred orientation. (c) 2006 American Institute of Physics.

引用

页数：3

共 21 条

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